JOINING MATERIAL, METHOD FOR MANUFACTURING JOINING MATERIAL, AND SEMI-CONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To solve such problems of a conventional semi-conductor device connected by using a Zn/Al/An clad material that the thermal stress caused by the difference in coefficient of thermal expansion can not be mitigated during the die bonding in the semi-conductor device, and a semi-c...

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Hauptverfasser:	IKEDA YASUSHI, OKAMOTO MASAHIDE, MURASATO YUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM
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Zusammenfassung:	PROBLEM TO BE SOLVED: To solve such problems of a conventional semi-conductor device connected by using a Zn/Al/An clad material that the thermal stress caused by the difference in coefficient of thermal expansion can not be mitigated during the die bonding in the semi-conductor device, and a semi-conductor element can be destroyed, and that if the joining temperature is high at ≥390-400°C, the heat resistance of a peripheral member including joined members such as an Si chip and frame must be at least ≥400°C, options of the members are decreased. SOLUTION: The joining material is composed of an Al-based alloy layer containing metals of one or more out of Mg, Sn, Ge, Ga, Bi and In, and a Zn-based alloy layer provided on an outermost surface of the Al-based alloy layer. COPYRIGHT: (C)2011,JPO&INPIT