MASK FOR PRODUCING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a mask that suppresses generation of foreign substances in an exposure process. SOLUTION: The mask for producing a semiconductor device includes a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on a part of the l...

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Bibliographische Detailangaben
Hauptverfasser: AKUTSU HARUKO, OTSUBO KYO, KATANO MAKIKO, MIZUNO AYAKO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a mask that suppresses generation of foreign substances in an exposure process. SOLUTION: The mask for producing a semiconductor device includes a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on a part of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern. COPYRIGHT: (C)2011,JPO&INPIT