MASK FOR PRODUCING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a mask that suppresses generation of foreign substances in an exposure process. SOLUTION: The mask for producing a semiconductor device includes a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on a part of the l...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a mask that suppresses generation of foreign substances in an exposure process. SOLUTION: The mask for producing a semiconductor device includes a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on a part of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern. COPYRIGHT: (C)2011,JPO&INPIT |
---|