METHOD FOR FORMING HIGH GERMANIUM CONCENTRATION SiGe STRESSOR

METHOD FOR FORMING HIGH GERMANIUM CONCENTRATION SiGe STRESSOR

PROBLEM TO BE SOLVED: To provide a method for forming an SiGe stressor, and to provide a transistor structure of an integrated circuit. SOLUTION: The method for forming the SiGe stressor includes: a step of depositing a first SiGe layer on at least one of a source area and a drain area of a semicond...

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Bibliographische Detailangaben
Hauptverfasser: CHO SHIGO, CHANG CHIH-HSIANG, WANG CHIEN-HSUN, XU JUNHAO, YEH CHIHIEH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for forming an SiGe stressor, and to provide a transistor structure of an integrated circuit. SOLUTION: The method for forming the SiGe stressor includes: a step of depositing a first SiGe layer on at least one of a source area and a drain area of a semiconductor substrate having a channel between the source area and the drain area; and a step of converting the top of the first SiGe layer to an oxide layer and converting the bottom of the first SiGe layer to a second SiGe layer, wherein the second SiGe layer has a higher Ge concentration than the first SiGe layer. COPYRIGHT: (C)2011,JPO&INPIT