MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To form a microcrystalline semiconductor film having a high crystallinity; and to manufacture a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor, with high mass productivity. SOLUTION: A...

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Hauptverfasser:	ICHIJO MITSUHIRO, TAJIMA RYOTA, NOZAWA TAICHI, TOKUMARU AKIRA, MIYAIRI HIDEKAZU, TANAKA TETSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form a microcrystalline semiconductor film having a high crystallinity; and to manufacture a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor, with high mass productivity. SOLUTION: A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, to mix the hydrogen and the deposition gas containing silicon or germanium, and a high-frequency power is supplied, whereby the microcrystalline semiconductor film is formed over a substrate. COPYRIGHT: (C)2011,JPO&INPIT