SELFSCANNING TYPE LIGHT EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF

SELFSCANNING TYPE LIGHT EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a selfscanning type light emitting element array, in which the characteristic of Schottky barrier diode that connects between gates of a light emitting thyristor is excellent. SOLUTION: The selfscanning type light emitting array 1 includes a plurality of light emitti...

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Hauptverfasser: SANO SHUNSUKE, ONO SEIJI
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SANO SHUNSUKE
ONO SEIJI
description PROBLEM TO BE SOLVED: To provide a selfscanning type light emitting element array, in which the characteristic of Schottky barrier diode that connects between gates of a light emitting thyristor is excellent. SOLUTION: The selfscanning type light emitting array 1 includes a plurality of light emitting thyristors S arrayed in one dimension, and an interlayer insulating film 10 formed on the plurality of light emitting thyristors S. It also includes a metal wiring 20 which is formed on the interlayer insulating film 10 and forms Schottky connection to wet-etched part of a gate layer 33 of the light emitting thyristor S through a wiring connection hole 11 formed in the interlayer insulating film 10, to constitute Schottky barrier diode SB that connects between gates of the light emitting thyristors S which adjoin each other among the plurality of light emitting thyristors S. COPYRIGHT: (C)2011,JPO&INPIT
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SELFSCANNING TYPE LIGHT EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF
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