METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY
PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a sili...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KROTTENTHALER PETER WAHLICH REINHOLD LAMBERT ULRICH VON AMMON WILFRIED GRAEF DIETER |
| description | PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011042576A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011042576A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011042576A3</originalsourceid><addsrcrecordid>eNrjZPD1dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cI9vTxdPb3Uwh29QXRLqHOIf5BCuGObq5BCh6OYSAlPv7hCi6ubq7OIUDKL9gzJJKHgTUtMac4lRdKczMoubmGOHvophbkx6cWFyQmp-allsR7BRgZGBoamBiZmps5GhOlCABWyi7J</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY</title><source>esp@cenet</source><creator>KROTTENTHALER PETER ; WAHLICH REINHOLD ; LAMBERT ULRICH ; VON AMMON WILFRIED ; GRAEF DIETER</creator><creatorcontrib>KROTTENTHALER PETER ; WAHLICH REINHOLD ; LAMBERT ULRICH ; VON AMMON WILFRIED ; GRAEF DIETER</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110303&DB=EPODOC&CC=JP&NR=2011042576A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110303&DB=EPODOC&CC=JP&NR=2011042576A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KROTTENTHALER PETER</creatorcontrib><creatorcontrib>WAHLICH REINHOLD</creatorcontrib><creatorcontrib>LAMBERT ULRICH</creatorcontrib><creatorcontrib>VON AMMON WILFRIED</creatorcontrib><creatorcontrib>GRAEF DIETER</creatorcontrib><title>METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY</title><description>PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD1dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cI9vTxdPb3Uwh29QXRLqHOIf5BCuGObq5BCh6OYSAlPv7hCi6ubq7OIUDKL9gzJJKHgTUtMac4lRdKczMoubmGOHvophbkx6cWFyQmp-allsR7BRgZGBoamBiZmps5GhOlCABWyi7J</recordid><startdate>20110303</startdate><enddate>20110303</enddate><creator>KROTTENTHALER PETER</creator><creator>WAHLICH REINHOLD</creator><creator>LAMBERT ULRICH</creator><creator>VON AMMON WILFRIED</creator><creator>GRAEF DIETER</creator><scope>EVB</scope></search><sort><creationdate>20110303</creationdate><title>METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY</title><author>KROTTENTHALER PETER ; WAHLICH REINHOLD ; LAMBERT ULRICH ; VON AMMON WILFRIED ; GRAEF DIETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011042576A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KROTTENTHALER PETER</creatorcontrib><creatorcontrib>WAHLICH REINHOLD</creatorcontrib><creatorcontrib>LAMBERT ULRICH</creatorcontrib><creatorcontrib>VON AMMON WILFRIED</creatorcontrib><creatorcontrib>GRAEF DIETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KROTTENTHALER PETER</au><au>WAHLICH REINHOLD</au><au>LAMBERT ULRICH</au><au>VON AMMON WILFRIED</au><au>GRAEF DIETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY</title><date>2011-03-03</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2011042576A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T10%3A29%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KROTTENTHALER%20PETER&rft.date=2011-03-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011042576A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |