METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY

METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY

PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a sili...

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Bibliographische Detailangaben
Hauptverfasser: KROTTENTHALER PETER, WAHLICH REINHOLD, LAMBERT ULRICH, VON AMMON WILFRIED, GRAEF DIETER
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×1017/cm3. SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×1017/cm3is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour. COPYRIGHT: (C)2011,JPO&INPIT