COMPOSITION FOR CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbonitride film on a base material by means of chemical vapor deposition of a precursor for forming the silicon carbonitride film. SOLUTION: The method uses a precursor selected from a group including amino silane represented by formu...

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Bibliographische Detailangaben
Hauptverfasser:	XIAO MANCHAO, HOCHBERG ARTHUR KENNETH
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbonitride film on a base material by means of chemical vapor deposition of a precursor for forming the silicon carbonitride film. SOLUTION: The method uses a precursor selected from a group including amino silane represented by formulas and a mixture thereof so as to form the silicon carbonitride film. COPYRIGHT: (C)2011,JPO&INPIT