METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can improve operability when APC (Advanced Process Control) is performed by the unit of a semiconductor wafer. SOLUTION: For example, when a resist pattern size is measured after exposure processing targeting th...

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Hauptverfasser: KAWACHI TOSHIHIDE, TASHIRO TAKESHI, YAMAMOTO AKIHIRO, OTSUKA MAKOTO, MIWA TOSHIHARU
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KAWACHI TOSHIHIDE
TASHIRO TAKESHI
YAMAMOTO AKIHIRO
OTSUKA MAKOTO
MIWA TOSHIHARU
description PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can improve operability when APC (Advanced Process Control) is performed by the unit of a semiconductor wafer. SOLUTION: For example, when a resist pattern size is measured after exposure processing targeting this time's lot (#1) to calculate exposure conditions by each unit of semiconductor wafers in a next time's lot (#2) while reflecting measured values, a state wherein an exposure starting sheet number of this time's lot (#1) is not enough or a state wherein a measurement sheet number in this time's lot (#1) is insufficient may occur. There, in a state where the exposure starting sheet number is not enough (for example, a state where slots 11 and 12 among slots 1 to 12 do not exist), measured values of 12 semiconductor wafers are derived using extrapolation calculation based on an approximate expression, and when the measurement sheet number is insufficient (for example, a state where only the measurement sheet number for the slots 1, 6, and 12 among the slots 1 to 12 are obtained), 12 semiconductor wafers measured values are derived using interpolation calculation based on an approximate expression. COPYRIGHT: (C)2011,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011040601A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011040601A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011040601A3</originalsourceid><addsrcrecordid>eNrjZNDxdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhoYGJgZmBoaOxkQpAgDrOyWe</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMAMOTO AKIHIRO ; OTSUKA MAKOTO ; MIWA TOSHIHARU</creator><creatorcontrib>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMAMOTO AKIHIRO ; OTSUKA MAKOTO ; MIWA TOSHIHARU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can improve operability when APC (Advanced Process Control) is performed by the unit of a semiconductor wafer. SOLUTION: For example, when a resist pattern size is measured after exposure processing targeting this time's lot (#1) to calculate exposure conditions by each unit of semiconductor wafers in a next time's lot (#2) while reflecting measured values, a state wherein an exposure starting sheet number of this time's lot (#1) is not enough or a state wherein a measurement sheet number in this time's lot (#1) is insufficient may occur. There, in a state where the exposure starting sheet number is not enough (for example, a state where slots 11 and 12 among slots 1 to 12 do not exist), measured values of 12 semiconductor wafers are derived using extrapolation calculation based on an approximate expression, and when the measurement sheet number is insufficient (for example, a state where only the measurement sheet number for the slots 1, 6, and 12 among the slots 1 to 12 are obtained), 12 semiconductor wafers measured values are derived using interpolation calculation based on an approximate expression. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110224&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011040601A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110224&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011040601A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWACHI TOSHIHIDE</creatorcontrib><creatorcontrib>TASHIRO TAKESHI</creatorcontrib><creatorcontrib>YAMAMOTO AKIHIRO</creatorcontrib><creatorcontrib>OTSUKA MAKOTO</creatorcontrib><creatorcontrib>MIWA TOSHIHARU</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can improve operability when APC (Advanced Process Control) is performed by the unit of a semiconductor wafer. SOLUTION: For example, when a resist pattern size is measured after exposure processing targeting this time's lot (#1) to calculate exposure conditions by each unit of semiconductor wafers in a next time's lot (#2) while reflecting measured values, a state wherein an exposure starting sheet number of this time's lot (#1) is not enough or a state wherein a measurement sheet number in this time's lot (#1) is insufficient may occur. There, in a state where the exposure starting sheet number is not enough (for example, a state where slots 11 and 12 among slots 1 to 12 do not exist), measured values of 12 semiconductor wafers are derived using extrapolation calculation based on an approximate expression, and when the measurement sheet number is insufficient (for example, a state where only the measurement sheet number for the slots 1, 6, and 12 among the slots 1 to 12 are obtained), 12 semiconductor wafers measured values are derived using interpolation calculation based on an approximate expression. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhoYGJgZmBoaOxkQpAgDrOyWe</recordid><startdate>20110224</startdate><enddate>20110224</enddate><creator>KAWACHI TOSHIHIDE</creator><creator>TASHIRO TAKESHI</creator><creator>YAMAMOTO AKIHIRO</creator><creator>OTSUKA MAKOTO</creator><creator>MIWA TOSHIHARU</creator><scope>EVB</scope></search><sort><creationdate>20110224</creationdate><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><author>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMAMOTO AKIHIRO ; OTSUKA MAKOTO ; MIWA TOSHIHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011040601A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWACHI TOSHIHIDE</creatorcontrib><creatorcontrib>TASHIRO TAKESHI</creatorcontrib><creatorcontrib>YAMAMOTO AKIHIRO</creatorcontrib><creatorcontrib>OTSUKA MAKOTO</creatorcontrib><creatorcontrib>MIWA TOSHIHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWACHI TOSHIHIDE</au><au>TASHIRO TAKESHI</au><au>YAMAMOTO AKIHIRO</au><au>OTSUKA MAKOTO</au><au>MIWA TOSHIHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2011-02-24</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can improve operability when APC (Advanced Process Control) is performed by the unit of a semiconductor wafer. SOLUTION: For example, when a resist pattern size is measured after exposure processing targeting this time's lot (#1) to calculate exposure conditions by each unit of semiconductor wafers in a next time's lot (#2) while reflecting measured values, a state wherein an exposure starting sheet number of this time's lot (#1) is not enough or a state wherein a measurement sheet number in this time's lot (#1) is insufficient may occur. There, in a state where the exposure starting sheet number is not enough (for example, a state where slots 11 and 12 among slots 1 to 12 do not exist), measured values of 12 semiconductor wafers are derived using extrapolation calculation based on an approximate expression, and when the measurement sheet number is insufficient (for example, a state where only the measurement sheet number for the slots 1, 6, and 12 among the slots 1 to 12 are obtained), 12 semiconductor wafers measured values are derived using interpolation calculation based on an approximate expression. COPYRIGHT: (C)2011,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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