METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To achieve a sufficient yield by preventing occurrence of particles from the outer peripheral part of a wafer occurring in a manufacturing process of a semiconductor device. SOLUTION: A method of manufacturing semiconductor devices includes: a first process for forming conductive films 4, 5, namely gate electrodes, in the wafer; a second process for selectively forming a protective film 7 on the conductive films 4, 5 formed at an outer peripheral part of the wafer in the conductive films 4, 5; a third process for forming a first resist pattern on the conductive films 4, 5 and for etching the conductive films 4, 5 with the first resist pattern as a mask to form the gate electrodes; a fourth process for forming an interlayer insulating film for covering the gate electrodes; and a fifth process for forming a second resist pattern on the interlayer insulating film and for etching the interlayer insulating film with the second pattern as a mask to form a contact hole. COPYRIGHT: (C)2011,JPO&INPIT