PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE BY USING THE SAME

PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE BY USING THE SAME

PROBLEM TO BE SOLVED: To provide a processing liquid capable of suppressing pattern collapse of a fine metal structure such as a semiconductor device or a micromachine, and to provide a method for producing a fine metal structure by using the processing liquid. SOLUTION: This invention relates to: t...

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Hauptverfasser: OTO HIDE, YAMADA KENJI, MATSUNAGA HIROTSUGU
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OTO HIDE
YAMADA KENJI
MATSUNAGA HIROTSUGU
description PROBLEM TO BE SOLVED: To provide a processing liquid capable of suppressing pattern collapse of a fine metal structure such as a semiconductor device or a micromachine, and to provide a method for producing a fine metal structure by using the processing liquid. SOLUTION: This invention relates to: the processing liquid for suppressing pattern collapse of the fine metal structure containing phosphate and/or polyoxyalkylene ether phosphate; and the method for producing the fine metal structure whose pattern is selected out of titanium nitride, titanium, ruthenium, ruthenium oxide, tungsten, tungsten silicide, tungsten nitride, aluminum oxide, hafnium oxide, hafnium silicate, hafnium nitride silicate, platinum, tantalum, tantalum oxide, tantalum nitride, nickel silicide, nickel silicon germanium, and nickel germanium. COPYRIGHT: (C)2011,JPO&INPIT
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE BY USING THE SAME
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