PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE BY USING THE SAME

PROBLEM TO BE SOLVED: To provide a processing liquid capable of suppressing pattern collapse of a fine metal structure such as a semiconductor device or a micromachine, and to provide a method for producing a fine metal structure by using the processing liquid. SOLUTION: This invention relates to: t...

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Bibliographische Detailangaben
Hauptverfasser:	OTO HIDE, YAMADA KENJI, MATSUNAGA HIROTSUGU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a processing liquid capable of suppressing pattern collapse of a fine metal structure such as a semiconductor device or a micromachine, and to provide a method for producing a fine metal structure by using the processing liquid. SOLUTION: This invention relates to: the processing liquid for suppressing pattern collapse of the fine metal structure containing phosphate and/or polyoxyalkylene ether phosphate; and the method for producing the fine metal structure whose pattern is selected out of titanium nitride, titanium, ruthenium, ruthenium oxide, tungsten, tungsten silicide, tungsten nitride, aluminum oxide, hafnium oxide, hafnium silicate, hafnium nitride silicate, platinum, tantalum, tantalum oxide, tantalum nitride, nickel silicide, nickel silicon germanium, and nickel germanium. COPYRIGHT: (C)2011,JPO&INPIT