MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving etching speed when manufacturing a semiconductor device that uses a single crystal silicon substrate. SOLUTION: The manufacturing method of a semiconductor device includes a reforming step in which...

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Hauptverfasser:	TANAKA HIROSHI, TOTOKAWA SHINJI, KANAMORI KATSUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MACHINE TOOLS MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK METAL-WORKING NOT OTHERWISE PROVIDED FOR MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TESTING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving etching speed when manufacturing a semiconductor device that uses a single crystal silicon substrate. SOLUTION: The manufacturing method of a semiconductor device includes a reforming step in which a single crystal silicon substrate 110 is irradiated with a laser beam L, and by shifting a focal point of the laser beam L, the interior of the single crystal silicon substrate 110 is partially poly crystalized so that at least a part of it is exposed from the surface of the single crystal silicon substrate 110, to form a reformed part 150, and an etching step for continuously etching such portion of the single crystal silicon substrate 110 as has been poly crystalized in the reforming step using etchant. COPYRIGHT: (C)2011,JPO&INPIT