DEVICE AND METHOD FOR TREATING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a device for treating a substrate uniformly bringing gas into contact with entire principal surfaces of a plurality of substrates located in a treatment chamber to improve film formation uniformity. SOLUTION: The horizontal angle of a treating gas introduction nozzle...

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Bibliographische Detailangaben
Hauptverfasser:	MAEDA KIYOHIKO, INADA TETSUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device for treating a substrate uniformly bringing gas into contact with entire principal surfaces of a plurality of substrates located in a treatment chamber to improve film formation uniformity. SOLUTION: The horizontal angle of a treating gas introduction nozzle 22a installed in an inner tube 2 and introducing a treating gas large in a supply amount is varied in synchronization with the rotary operation of a boat mounted with a plurality of substrates. The horizontal angle of a treating gas introduction nozzle 22b installed in the inner tube 2 for introducing the treating gas small in a supply amount is fixed by being directed to the vicinity of the center of the substrates. COPYRIGHT: (C)2011,JPO&INPIT