SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which high speed write-in can be performed without increasing storage capacity of a region in which less bits than a multi-level region are stored, while a life time of a product can be extended. SOLUTION: The semiconductor memory dev...

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Bibliographische Detailangaben
Hauptverfasser: SHIBATA NOBORU, KANEBAKO KAZUNORI
Format: Patent
Sprache:eng
Schlagworte:
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PHYSICS
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which high speed write-in can be performed without increasing storage capacity of a region in which less bits than a multi-level region are stored, while a life time of a product can be extended. SOLUTION: The semiconductor memory device is composed of a plurality of memory cells storing data of (n) bits (n:natural number of 2 or more) in one cell. Data of h(H≤n) bits is stored in a memory MLC of a first region MLB out of a plurality of memory cells, data of i(i