METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device hardly generating resist residual in peeling-off a plating resist film made of a dry film resist for forming a columnar electrode of the semiconductor device having the columnar electrode. SOLUTION: After formation of an upper metal layer 9 for wiring by electrolytic plating, a copper oxide film 25 is formed on upper surfaces of the upper metal layer 9 and a base material metal layer 8. Then, a columnar electrode forming plating resist film 26 made of a negative type dry film resist is formed. An opening 27 is formed in the columnar electrode forming plating resist film 26 and an opening 28 is formed in the copper oxide film 25. The columnar electrode 10 is formed in the openings 27, 28 by electrolytic plating. The columnar electrode forming plating resist film 26 is peeled off. The entire copper oxide film 25 and the base material metal layer 8 existing in a region not under the upper metal layer 9 are simultaneously etched off. The resist residual remaining on an upper surface of the copper oxide film 25 is removed thereby. COPYRIGHT: (C)2011,JPO&INPIT