PATTERN FORMATION METHOD

PROBLEM TO BE SOLVED: To prevent pattern defects from occurring in extreme ultraviolet light exposure and to form a fine pattern having a good shape.SOLUTION: A resist film 102 having a film thickness of ≤50 nm is formed from a positive-type chemically amplified resist material onto a substrate 101....

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent pattern defects from occurring in extreme ultraviolet light exposure and to form a fine pattern having a good shape.SOLUTION: A resist film 102 having a film thickness of ≤50 nm is formed from a positive-type chemically amplified resist material onto a substrate 101. Subsequently, the formed resist film 102 is irradiated with an exposure light comprising extreme ultraviolet light in a selective manner to achieve pattern exposure. The resist film 102 that has been subjected to pattern exposure is heated, and the heated resist film 102 is developed to form a resist pattern 102a from the resist film 102. In the chemically amplified resist material, at least some of acid leaving groups that are bound to the main polymer are cyclic ether groups each capable of forming an acetal bond that is substituted by a hydrogen atom contained in a carboxyl group.