CHEMICALLY AMPLIFIED RESIST MATERIAL AND PATTERN FORMATION METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a pattern formation method that reduces roughness produced on a resist pattern to make the pattern have a good shape.SOLUTION: At first, a resist film 102 is formed from a chemically amplified resist material onto a substrate 101. The resist film 102 is irradiated wi...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a pattern formation method that reduces roughness produced on a resist pattern to make the pattern have a good shape.SOLUTION: At first, a resist film 102 is formed from a chemically amplified resist material onto a substrate 101. The resist film 102 is irradiated with an exposure light comprising extreme ultraviolet light in a selective manner to achieve pattern exposure. The resist film 102 that has been subjected to pattern exposure is heated, and the heated resist film 102 is developed to form a resist pattern 102a from the resist film 102. The chemically amplified resist material comprises a block polymer comprising a first monomer unit and a second monomer unit, wherein the first monomer unit has an onium salt having an anionic moiety and a cationic moiety and contains a group covalently bound to a sulfonate group that is the anionic moiety, and wherein the second monomer unit contains an acid leaving group.