GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitrid...

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1. Verfasser:	MIKI HISAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MIKI HISAYUKI
description	PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitride compound semiconductor is laminated on a substrate, a light extraction surface is formed by a translucent film, the surface of the translucent film has bumps and dips formed by planes inclined with respect to the substrate surface, and the shapes of the bumps and dips on the surface of the translucent film is a dot or a lattice.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011014936A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011014936A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011014936A3</originalsourceid><addsrcrecordid>eNrjZHB2d_Tx8Qz1VfDzDAnydHFVcHIMdnVRcPb3DfAP9XNRCHb19XT293MJdQ7xD1Lw8XT3CNEFCoWEePq5K7j6uPq6-oXwMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NDA0MTS2MzR2OiFAEAmxwsIQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><source>esp@cenet</source><creator>MIKI HISAYUKI</creator><creatorcontrib>MIKI HISAYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitride compound semiconductor is laminated on a substrate, a light extraction surface is formed by a translucent film, the surface of the translucent film has bumps and dips formed by planes inclined with respect to the substrate surface, and the shapes of the bumps and dips on the surface of the translucent film is a dot or a lattice.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110120&DB=EPODOC&CC=JP&NR=2011014936A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110120&DB=EPODOC&CC=JP&NR=2011014936A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIKI HISAYUKI</creatorcontrib><title>GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitride compound semiconductor is laminated on a substrate, a light extraction surface is formed by a translucent film, the surface of the translucent film has bumps and dips formed by planes inclined with respect to the substrate surface, and the shapes of the bumps and dips on the surface of the translucent film is a dot or a lattice.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB2d_Tx8Qz1VfDzDAnydHFVcHIMdnVRcPb3DfAP9XNRCHb19XT293MJdQ7xD1Lw8XT3CNEFCoWEePq5K7j6uPq6-oXwMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NDA0MTS2MzR2OiFAEAmxwsIQ</recordid><startdate>20110120</startdate><enddate>20110120</enddate><creator>MIKI HISAYUKI</creator><scope>EVB</scope></search><sort><creationdate>20110120</creationdate><title>GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><author>MIKI HISAYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011014936A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIKI HISAYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIKI HISAYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><date>2011-01-20</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitride compound semiconductor is laminated on a substrate, a light extraction surface is formed by a translucent film, the surface of the translucent film has bumps and dips formed by planes inclined with respect to the substrate surface, and the shapes of the bumps and dips on the surface of the translucent film is a dot or a lattice.</abstract><oa>free_for_read</oa></addata></record>
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title	GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T09%3A11%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIKI%20HISAYUKI&rft.date=2011-01-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011014936A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true