GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitrid...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor light-emitting element excellent in light extraction efficiency and having excellent uniformity of light distribution.SOLUTION: In the gallium nitride based compound semiconductor light-emitting element, a gallium nitride compound semiconductor is laminated on a substrate, a light extraction surface is formed by a translucent film, the surface of the translucent film has bumps and dips formed by planes inclined with respect to the substrate surface, and the shapes of the bumps and dips on the surface of the translucent film is a dot or a lattice. |
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