FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To provide a field effect transistor reduced in variations in mobility.SOLUTION: In the field effect transistor having at least a gate insulation film, a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, the source electrode and/or drain electrod...

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Bibliographische Detailangaben
Hauptverfasser:	OZEKI YOSUKE, TSUJI YOSHIKO, OKADA FUMIO, ARAKI KENTOMO, SAKAI YOSHIMASA, ONO REI, ONISHI RYOYA, ISOBE MOTOHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a field effect transistor reduced in variations in mobility.SOLUTION: In the field effect transistor having at least a gate insulation film, a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, the source electrode and/or drain electrode are disposed at a recess of the gate insulation film, and the height of the source electrode and/or drain electrode to the surface of the gate insulation film is not lower than 10 nm.