METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device that suppresses variations in the thickness direction of a solder layer, and to provide the semiconductor device. SOLUTION: The semiconductor device is manufactured by the use of the method that includes a process for forming a lamination body 10, by laminating the first solder layer on one surface of a semiconductor element and the second solder layer on the other surface, and laminating the second solder layer on one surface of a heat sink block 131 and the third solder layer on the other surface; a process for arranging a holding member 20, which has a shape fitting the circumference of the laminate body and having a locking section, in the circumference of the laminate 10, and laminating a first heat sink 31 and a second heat sink 32 on both surfaces of the laminate 10; a lock process for applying a load in the laminating direction, from at least one surface between the first and second heat sinks 31, 32, heating the first, second and third solder layers, and locking at least one laminating directional surface, between the heat sink block 131 and the semiconductor element to the locking section; and a process for hardening the heated first, second and third solder layers. COPYRIGHT: (C)2011,JPO&INPIT