TEST WAFER FOR PERFORMANCE OF THROUGH-ELECTRODE PROCESS

PROBLEM TO BE SOLVED: To satisfy a request that, while an electrode penetrating wafers is formed in order to manufacture a highly-integrated device by sticking the wafers, it has been necessary to provide the commonly-usable wafer in order to evaluate its manufacturing process at a wide performance level, that is, a test wafer. SOLUTION: A way of providing characters indicating the shape and the depth of a hole, the shape of a bottom surface, and design specifications is designed while taking features of the process for the through-electrode into consideration so that the wide performance level of the process can be evaluated. For this purpose, the present invention relates to the test wafers which have patterns of trenches and holes mixedly, plane shapes including round, polygonal, and square shapes, different depths, and round bottom surfaces. COPYRIGHT: (C)2011,JPO&INPIT