SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MAGNETIC MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a magnetic memory device wherein write data can be accurately written to a selected memory cell. SOLUTION: Control signal lines (210l, 211a, and 211b) having a divided structure for transferring a control signal are disposed in a wiring layer which is parallel with and different from write current lines (BL0 and BL1) for transmitting a write current to memory cells. Current drive circuits are disposed correspondingly to the respective write current lines, and the write current is made to flow to a corresponding write current line in accordance with the control signal on the control signal lines and write data. COPYRIGHT: (C)2011,JPO&INPIT