PLASMA-PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a plasma-processing device by which the processed region of a processed object is evenly processed. SOLUTION: The plasma-processing device 1002 scans a workpiece 1902 supported by a first electrode structure 1004 having a first electrode 1012 comprising a first oppos...

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Bibliographische Detailangaben
Hauptverfasser:	TANGE MASAJI, TERASAWA TATSUYA, WATANABE YUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma-processing device by which the processed region of a processed object is evenly processed. SOLUTION: The plasma-processing device 1002 scans a workpiece 1902 supported by a first electrode structure 1004 having a first electrode 1012 comprising a first opposing surface 1020 with the same planar shape as that of the processed region 1908, by means of a second electrode structure 1036 having a second electrode 1046 comprising a linear second opposing surface 1050. Further, the device 1002 actuates the plasma onto the upper surface 1904 of the workpiece 1902, by applying a voltage between the first electrode 1012 and the second electrode 1046 while scanning the workpiece 1902 by the second electrode structure 1036, and generating the plasma in a gap 1038 between the first electrode structure 1004 and the second electrode structure 1036. COPYRIGHT: (C)2011,JPO&INPIT