SEMICONDUCTOR SUBSTRATE CLEANING SOLUTION AND SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING SAME

PROBLEM TO BE SOLVED: To provide semiconductor substrate cleaning solution capable of surely removing residues existing on a semiconductor substrate after dry etching and/or ashing at semiconductor production, and suppressing corrosion on a semiconductor substrate having a Low-k film deterioration layer, and the like, and to provide a semiconductor substrate cleaning method that uses the solution. SOLUTION: A semiconductor substrate cleaning solution contains silicofluoric acid, boric acid of 0.10-fold molar or more for silicofluoric acid at a saturation degree of melting or below, and water and a semiconductor substrate cleaning method uses the solution. COPYRIGHT: (C)2011,JPO&INPIT