FORMATION OF SILICON SHEET BY IMPINGING FLUID

PROBLEM TO BE SOLVED: To provide a device and method for forming a silicon sheet by impinging fluid. SOLUTION: This invention relates to techniques for forming crystalline bodies. An example system, a device or method for forming crystalline bodies may include a crucible for containing molten crysta...

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Bibliographische Detailangaben
1. Verfasser:	BANG CHRISTOPHER A
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device and method for forming a silicon sheet by impinging fluid. SOLUTION: This invention relates to techniques for forming crystalline bodies. An example system, a device or method for forming crystalline bodies may include a crucible for containing molten crystalline material and a support for accommodating a seed on an end thereof, the support being movable along a translation axis in a pull direction to draw the seed crystal from a molten crystal, thereby initiating growth of a crystalline body along a growth path. Further examples may include one or more nozzles configured to be coupled to a fluid source, the nozzles being positioned relative to the growth path for shaping the crystal body as the molten crystal is pulled in the pull direction along the growth path. COPYRIGHT: (C)2011,JPO&INPIT