FILM FORMING METHOD, FORMING METHOD OF GATE ELECTRODE STRUCTURE, AND PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a film forming method for obtaining an extremely thin interface oxide film having high in-plane uniformity of film thickness and less defect by performing a low oxygen partial pressure oxidation while the surface of a silicon layer is protected by a chemical oxide fi...

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Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI TAKESHI, AOYAMA SHINTARO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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