FILM FORMING METHOD, FORMING METHOD OF GATE ELECTRODE STRUCTURE, AND PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a film forming method for obtaining an extremely thin interface oxide film having high in-plane uniformity of film thickness and less defect by performing a low oxygen partial pressure oxidation while the surface of a silicon layer is protected by a chemical oxide film. SOLUTION: The film forming method in which an interface oxide layer is formed on a surface of a silicon layer of a material W subjected to a treatment so as to be interposed between a gate insulating film and the surface, includes a chemical oxide film forming step of forming the chemical oxide film by chemical cleaning processing to the silicon layer; and a heat-processing step of forming the interface oxide film by heat-processing the material subjected to a treatment in which the chemical oxide film is formed, in an atmosphere of 0.2-2 Pa oxygen partial pressure. Thereby an extremely thin interface oxide film having high in-plane uniformity of film thickness and less defect is obtained by performing a low oxygen partial pressure oxidation while the surface of a silicon layer is protected by the chemical oxide film. COPYRIGHT: (C)2011,JPO&INPIT