PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma processing method capable of suppressing deformation in an electrode, while improving the time efficiency for plasma treatment. SOLUTION: A method for plasma processing includes the steps of starting discharge at an electrode pair (ST0); next, performing a f...

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Bibliographische Detailangaben
Hauptverfasser:	ISSHIKI KAZUHIKO, KISHIMOTO KATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing method capable of suppressing deformation in an electrode, while improving the time efficiency for plasma treatment. SOLUTION: A method for plasma processing includes the steps of starting discharge at an electrode pair (ST0); next, performing a first plasma treatment, while continuing to supply a first value of ac power P1 to the electrode pair (ST1); next, performing a second plasma treatment while continuing to supply ac power P2, having a higher value than the first value to the electrode pair (ST2); and finally, performing a third plasma treatment, while continuing to supply ac power P3 of a further higher value (ST3). In this way, plasma treatment can be performed efficiently, while deformation in the electrode can be suppressed. COPYRIGHT: (C)2011,JPO&INPIT