METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, AND COMPOUND SEMICONDUCTOR LAYER, AND METHOD OF CONTROLLING MBE (MOLECULAR BEAM EPITAXY) DEVICE

METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, AND COMPOUND SEMICONDUCTOR LAYER, AND METHOD OF CONTROLLING MBE (MOLECULAR BEAM EPITAXY) DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum well structure having a well layer with high photoluminescence intensity, a semiconductor laser, and a compound semiconductor layer with the high photoluminescence intensity, and to provide a method of controlling a molecular beam...

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Bibliographische Detailangaben
1. Verfasser: SAGA NORIHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum well structure having a well layer with high photoluminescence intensity, a semiconductor laser, and a compound semiconductor layer with the high photoluminescence intensity, and to provide a method of controlling a molecular beam epitaxy device using the photoluminescence intensity of the compound semiconductor layer. SOLUTION: The quantum well structure has the well layer consisting of InGaAs or GaInNAs, wherein an oxygen concentration of the well layer is no more than 5×1016atoms/cm3. COPYRIGHT: (C)2011,JPO&INPIT