CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

PROBLEM TO BE SOLVED: To provide a cleaning liquid for lithography which suppresses occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. SOLUTION: In the cleaning liquid for lith...

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Hauptverfasser:	MASUJIMA MASAHIRO, KUMAGAI TOMOYA, KOSHIYAMA JUN
Format:	Patent
Sprache:	eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS SPECIALLY ADAPTED THEREFOR CANDLES CHEMISTRY CINEMATOGRAPHY DETERGENT COMPOSITIONS DETERGENTS ELECTROGRAPHY FATTY ACIDS THEREFROM HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RECOVERY OF GLYCEROL RESIN SOAPS SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cleaning liquid for lithography which suppresses occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. SOLUTION: In the cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film is suppressed. Accordingly, even when the method for forming a resist pattern using this cleaning liquid for lithography, the resist film is not dissolved, whereby occurrence of CD shift is efficiently suppressed. COPYRIGHT: (C)2011,JPO&INPIT