SUBSTRATE TREATMENT APPARATUS, CVD APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON DEVICE

PROBLEM TO BE SOLVED: To improve the distribution of the thickness of a film formed in an apparatus having a structure for preventing high-energy particles generated in a plasma-generating part from entering into a substrate to be film-formed thereon by arranging a partition wall between the plasma-generating part and a film formation treatment part. SOLUTION: The substrate treatment apparatus has a structure comprising: a first space in which the plasma is generated; a second space having a substrate holder for mounting a substrate thereon; the partition wall which separates the first space from the second space, and has a third space in its inner part; a plurality of first holes which connect the first space with the second space and are formed in the partition wall; a plurality of second holes which connect the second space with the third space and are formed in the face of the partition wall, which contacts the second space; a first gas-introducing means which introduces a first gas into the first space; and a second gas-introducing means which introduces a second gas into the third space. In the structure, the open area ratio of the first holes per unit area is larger in a central part than in a peripheral part. COPYRIGHT: (C)2011,JPO&INPIT