SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device in which pitches between wirings, or the like, can be made narrow, without using an expensive exposure apparatus or expensive masks. SOLUTION: The semiconductor device has a first conductive pattern 42; a second conductive pattern 42 formed adj...

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Bibliographische Detailangaben
Hauptverfasser: MITANI JUNICHI, ASAI YOSHIMORI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device in which pitches between wirings, or the like, can be made narrow, without using an expensive exposure apparatus or expensive masks. SOLUTION: The semiconductor device has a first conductive pattern 42; a second conductive pattern 42 formed adjacent to the first conductive pattern; a first conductor plug formed under a predetermined area of the first conductive pattern; a second conductor plug 62nformed on a predetermined area of the first conductive pattern; a third conductor plug formed under a predetermined area of the second conductive pattern adjacent to the predetermined area of the first conductive pattern; a fourth conductor plug 62n+1formed on the predetermined area of the second conductive pattern; a third conductive pattern 62, formed above the first conductive pattern 42 and connected to the second conductor plug; a fourth conductive pattern 64 formed above the second conductive pattern and connected to the fourth conductor plug. The fourth conductor plug is disposed in a displaced position from the second conductor plug. COPYRIGHT: (C)2011,JPO&INPIT