METHOD OF FORMING PATTERN OF INSULATING RESIN FILM ON SURFACE OF SUBSTRATE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of forming a pattern of an insulating resin film on a surface of a substrate by cutting and a semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes: a first step of forming the insulating resin film (3) on a main surfa...

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Bibliographische Detailangaben
Hauptverfasser:	TOMISAKA MANABU, AKAMATSU KAZUO, TAI AKIRA, KATO KAZUTO, FUKUDA YUTAKA, KAMEYAMA MICHIO, FUKAYA TERUKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BROACHING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILING LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOTOTHERWISE PROVIDED FOR MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS PLANING SAWING SCRAPING SEMICONDUCTOR DEVICES SHEARING SLOTTING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of forming a pattern of an insulating resin film on a surface of a substrate by cutting and a semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes: a first step of forming the insulating resin film (3) on a main surface side so that a connection electrode (2) is covered, in a semiconductor substrate (1) on the main surface of which the connection electrode (2) is formed; and a second step of forming an aperture (31) comprising a tapered portion (10) and a connecting portion (21) so that the connecting portion (21) of the connection electrode (2) is exposed through cutting by a byte (4) whose rake angle is zero or negative. COPYRIGHT: (C)2011,JPO&INPIT