SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in ON resistance while reducing a current collapse and maintaining a breakdown voltage, and operates at high voltage and at a high frequency. SOLUTION: A heterojunction type nitride semiconductor device includes a channel laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FUKITA MUNEYOSHI, IMAI AKIFUMI, ABE YUJI, NANJO TAKUMA, YAGYU EIJI
Format: Patent
Sprache:eng
Schlagworte:
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