SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in ON resistance while reducing a current collapse and maintaining a breakdown voltage, and operates at high voltage and at a high frequency. SOLUTION: A heterojunction type nitride semiconductor device includes a channel layer 2 formed on a substrate 1, an electron supply layer 3 formed on the channel layer 2, a gate electrode 5 selectively formed on the electron supply layer 3, source and drain electrodes 4a, 4b formed apart from each other across the gate electrode 5, a thin film 8 as a first thin film formed in a first region except a periphery of a drain-electrode-side end of the gate electrode 5, and acting on a two-dimensional electron gas concentration corresponding to the first region, and a thin film 6 as a second thin film formed in a second region nearby the drain electrode-side end of the gate electrode 5, and acting on a two-dimensional electronic gas concentration, the concentration being lower than that corresponding to the first region. COPYRIGHT: (C)2011,JPO&INPIT