METHOD FOR FORMING METAL NITRIDE FILM, AND STORAGE MEDIUM

PROBLEM TO BE SOLVED: To provide a method for forming a metal nitride film capable of forming the film at lower temperature and with higher film forming speed. SOLUTION: A wafer that is a substrate to be treated is installed in a chamber while keeping the vacuum state in the chamber, and a TiCl4gas...

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Bibliographische Detailangaben
Hauptverfasser:	KAKIMOTO AKINAGA, NARISHIMA KENSAKU, HOTTA JUNJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a metal nitride film capable of forming the film at lower temperature and with higher film forming speed. SOLUTION: A wafer that is a substrate to be treated is installed in a chamber while keeping the vacuum state in the chamber, and a TiCl4gas and an MMH gas are supplied into the chamber alternately while heating the wafer, thereby forming a TiN film on the wafer. COPYRIGHT: (C)2011,JPO&INPIT