MOS TRANSISTOR, SEMICONDUCTOR DEVICE HAVING BUILT-IN MOS TRANSISTOR, AND ELECTRONIC EQUIPMENT USING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technique associated with a MOS transistor which is made low in threshold voltage and small in ON resistance, and has low power consumption and a high breakdown voltage. SOLUTION: The MOS transistor includes a buried oxide film 11 provided on a semiconductor substr...

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Bibliographische Detailangaben

1. Verfasser:	NEGORO TAKAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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