DRY ETCHING METHOD

DRY ETCHING METHOD

PROBLEM TO BE SOLVED: To provide a dry etching method providing a good profile with less side etch without receiving restriction by a micro loading effect. SOLUTION: The dry etching method for etching a sample having a pattern formed on a surface thereof and having an isolated portion and a dense po...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ISHIMURA HIROAKI, ITO TORU, ISHIHARA MASUNORI, INOUE YOSHIHARU, NISHIDA TOSHIAKI, FURUBAYASHI HITOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a dry etching method providing a good profile with less side etch without receiving restriction by a micro loading effect. SOLUTION: The dry etching method for etching a sample having a pattern formed on a surface thereof and having an isolated portion and a dense portion by using plasma includes a first etching step using etching gas containing CF-based gas and nitrogen gas in which an etching rate of the dense portion of the pattern is higher than an etching rate of the isolated portion of the pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is higher than the etching rate of the dense portion of the pattern. COPYRIGHT: (C)2011,JPO&INPIT