METHOD FOR MELTING POLYCRYSTALLINE SILICON RAW MATERIAL IN CZ METHOD

PROBLEM TO BE SOLVED: To provide a method for melting a polycrystalline silicon raw material in the CZ method. SOLUTION: A polycrystalline silicon raw material is melted in the state that a first layer 26 filled with a lump of polycrystalline silicon 24a used as a raw material of single crystal sili...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUZUKI SADAYUKI, SAISHOJI TOSHIAKI, YAMASHITA YOSHITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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