METHOD FOR MELTING POLYCRYSTALLINE SILICON RAW MATERIAL IN CZ METHOD

PROBLEM TO BE SOLVED: To provide a method for melting a polycrystalline silicon raw material in the CZ method. SOLUTION: A polycrystalline silicon raw material is melted in the state that a first layer 26 filled with a lump of polycrystalline silicon 24a used as a raw material of single crystal sili...

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Hauptverfasser:	SUZUKI SADAYUKI, SAISHOJI TOSHIAKI, YAMASHITA YOSHITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for melting a polycrystalline silicon raw material in the CZ method. SOLUTION: A polycrystalline silicon raw material is melted in the state that a first layer 26 filled with a lump of polycrystalline silicon 24a used as a raw material of single crystal silicon is formed in a crucible 12 used by the CZ method and a second layer 28 filled with a lump of the polycrystalline silicon 24b is layered on the first layer 26, where the height of the first layer 26 is formed to be lower than the height of the liquid surface of melt 30 after dissolving the whole polycrystalline silicon raw material, and the periphery 28a of the second layer 28 is formed apart from the side face 14a of the inside of the crucible 12. COPYRIGHT: (C)2011,JPO&INPIT