Al-Ni ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING THE SAME

PROBLEM TO BE SOLVED: To provide an Al-Ni alloy wiring material which can directly make contact with a transparent electrode layer of ITO (Indium Tin Oxide) or the like, has superior corrosion resistance against a developer and superior corrosion resistance in the formation of a contact hole, and al...

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Hauptverfasser: BAE YANGHO, KIM BYEONG-BEOM, TOKUCHI NARINORI, FUDA RYUMA, YUN PIL SANG, MATSUURA YOSHINORI, KUBOTA TAKASHI, JEONG CHANGOH
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an Al-Ni alloy wiring material which can directly make contact with a transparent electrode layer of ITO (Indium Tin Oxide) or the like, has superior corrosion resistance against a developer and superior corrosion resistance in the formation of a contact hole, and allows devices to have constant contact resistance values even though the devices are formed within a surface of a glass substrate having a large area. SOLUTION: In the Al-Ni alloy wiring material containing nickel in aluminum, cerium and boron are contained. When the atomic percentage of nickel for nickel content is defined as Xat%, the atomic percentage of cerium for cerium content is defined as Yat% and the atomic percentage of boron for boron content is defined as Zat%, respective concentrations are within the range of regions satisfying respective inequalities 0.5≤X≤5.0, 0.01≤Y≤1.0 and 0.01≤Z≤1.0. COPYRIGHT: (C)2011,JPO&INPIT