METHOD FOR NORMALIZING STRAIN IN SEMICONDUCTOR DEVICE, AND STRAIN-NORMALIZED SEMICONDUCTOR DEVICE

METHOD FOR NORMALIZING STRAIN IN SEMICONDUCTOR DEVICE, AND STRAIN-NORMALIZED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for normalizing strain in a semiconductor device, and a strain-normalized semiconductor device. SOLUTION: This method includes steps of: forming first and second field-effect transistors of an integrated circuit; forming a stress layer over the first and sec...

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Bibliographische Detailangaben
Hauptverfasser: ELLIS-MONAGHAN JOHN JOSEPH, HABIB NAZMUL, KERRY BERNSTEIN, BRUCE BALCH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for normalizing strain in a semiconductor device, and a strain-normalized semiconductor device. SOLUTION: This method includes steps of: forming first and second field-effect transistors of an integrated circuit; forming a stress layer over the first and second field-effect transistors, the stress layer inducing strain in channel regions of the first and second field-effect transistors; and selectively thinning the stress layer over at least a portion of the second field-effect transistor. COPYRIGHT: (C)2011,JPO&INPIT