METHOD OF FORMING INFORMATION STORAGE PATTERN

PROBLEM TO BE SOLVED: To provide a method of forming an information storage pattern capable of improving electric characteristics of a phase change memory. SOLUTION: The method of forming information storage pattern includes: a process (S100) of placing a semiconductor substrate in the treatment cha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHO SUNG-LAE, IM DONG-HYUN, URAZAEV VLADIMIR, SHIN SEUNG-BACK, LEE JIN-IL, JEONG JIN-HA, KIM JUNG HYEON, AN HYEONG-GEUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!