METHOD OF FORMING INFORMATION STORAGE PATTERN

PROBLEM TO BE SOLVED: To provide a method of forming an information storage pattern capable of improving electric characteristics of a phase change memory. SOLUTION: The method of forming information storage pattern includes: a process (S100) of placing a semiconductor substrate in the treatment chamber of semiconductor vapor deposition equipment; a process (S200) of forming a lower electrode covered with an interlayer insulating film on the semiconductor substrate; processes (S300 to S600) of injecting treating gas into the treatment chamber in pulse shapes different from one another to form a deposition layer in contact with the lower electrode across the interlayer insulating film; a process (S700) of repeating (S300 to S600) until the deposition layer reaches a target thickness; a process (S800) of etching the deposition layer so as to expose the interlayer insulating film to form a memory cell in the interlayer insulation film; and a process (S900) of forming the upper electrode on the memory cell, whereby a gas phase reaction is properly adjusted and, thereby, production of void and seam in the memory cell can be prevented. COPYRIGHT: (C)2011,JPO&INPIT