GROUP III NITRIDE SUBSTRATE

GROUP III NITRIDE SUBSTRATE

PROBLEM TO BE SOLVED: To provide a group III nitride substrate having superior characteristics by suppressing dislocation, being easily producible and being inexpensive. SOLUTION: In the group III nitride substrate 1 forming a multilayer film layer 3 on a substrate 2, the multilayer film layer 3 has...

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Bibliographische Detailangaben
Hauptverfasser: OMORI NORIKO, KOMIYAMA JUN, UCHIMARU TOMONORI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a group III nitride substrate having superior characteristics by suppressing dislocation, being easily producible and being inexpensive. SOLUTION: In the group III nitride substrate 1 forming a multilayer film layer 3 on a substrate 2, the multilayer film layer 3 has plural film layers 5 where a plurality of film layers comprising a group III nitride are layered and a group III nitride layer 6 formed on the surface of the plural film layers 5. The plural film layers 5 have a first layer 5a where a plurality of films having unevenness on surfaces are layered and a second layer 5b formed on the first layer 5a and where a plurality of films having flat surfaces are layered. COPYRIGHT: (C)2011,JPO&INPIT