HIGH-VOLTAGE GENERATOR FOR SEMICONDUCTOR MEMORY DEVICE ELEMENT

PROBLEM TO BE SOLVED: To provide a high-voltage generator used for semiconductor memory devices, which prevents breakdown of joints resulting from breakdown of gate oxide film of a transistor and improve reliability. SOLUTION: The high-voltage generator includes: a level sensing means which senses a...

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Bibliographische Detailangaben
Hauptverfasser: GU KIHO, KYO BYONSHU, KAN EISEI, KIN KEIEN, BOKU KOJUN, KIN EIHI, BOKU SHOTAI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a high-voltage generator used for semiconductor memory devices, which prevents breakdown of joints resulting from breakdown of gate oxide film of a transistor and improve reliability. SOLUTION: The high-voltage generator includes: a level sensing means which senses a voltage level of a high-voltage signal and generates a high-voltage enable signal when the voltage level of the high-voltage signal reaches a predetermined target value; an oscillating means of generating a plurality of clocks including first to fourth clocks responding to the high-voltage enable signal; a high-voltage charge pump means of raising a voltage level of an external voltage signal responding to the clock signal and generating a high-voltage signal by a high-voltage node; and a power-on precharge means of initializing the high-voltage node to a predetermined level by responding to a control signal. COPYRIGHT: (C)2011,JPO&INPIT