IMPROVEMENT OF ALIGNMENT TARGET CONTRAST IN LITHOGRAPHY DOUBLE PATTERNING METHOD

PROBLEM TO BE SOLVED: To improve the contrast of an alignment mark, in such a lithography patterning method as a double patterning method for improving the resolution of an optical lithography. SOLUTION: A system, method, and product for manufacturing a semiconductor device by a lithography which are accompanied by a lithography double patterning process for adding a coloring matter to a first or second lithography pattern are provided. A position of the first lithography pattern is detected, and for aligning the second lithography pattern with the position directly, the coloring matter is used. The contrast of the alignment mark is the property of a fluorescence, light emission, light absorption, or light reflection in a specific or predetermined wavelength region. The used wavelength may coincide with the wavelength of the alignment beam. The coloring matter is detected even when the coloring matter is finished by a radiation sensing layer (for example, a resist). COPYRIGHT: (C)2011,JPO&INPIT