GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide an advantageous producing method for obtaining a group III-V compound nitride semiconductor crystal having a high-quality and large area nonpolar face. SOLUTION: In the method for producing a group III nitride semiconductor crystal, a seed crystal having a nonpolar f...

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Hauptverfasser:	FUJITO TAKESHI, KIYOMI KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an advantageous producing method for obtaining a group III-V compound nitride semiconductor crystal having a high-quality and large area nonpolar face. SOLUTION: In the method for producing a group III nitride semiconductor crystal, a seed crystal having a nonpolar face is prepared and a growing step to grow a group III nitride semiconductor in a gas phase from the nonpolar face is provided. The growing step includes that the group III nitride semiconductor is grown to extend in the +C axis direction of the seed crystal. COPYRIGHT: (C)2011,JPO&INPIT